Junior Postdoctoral Researcher (JPR) – Computational Materials Science

Description

Offer Description: Position in the project: Junior Postdoctoral Researcher (JPR) – Computational Materials Science Research Field: Computational Materials Science / Condensed Matter Physics / Semiconductor Physics / Materials Science Scientific discipline: Physics / Materials Engineering Job type (employment contract/stipend): Employment contract Working time (full-time / part-time, hours per week): Full-time position (40 hours per week) Number of positions available: 1 Monthly remuneration (total employer’s cost): 15 000 - 20 000 PLN Expected net salary (approximate): 8 800 - 11 600 PLN Position starts on: November/December 2026 Maximum period of contract/stipend agreement: Contract until 31 December 2029 Institution (full official name): Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”, an independent research unit of the Institute of High Pressure Physics, Polish Academy of Sciences Project leader: Prof. dr hab. inż. Michał Boćkowski Project title: Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” Funding programme: Project International Research Agendas (MAB), Grant No. FENG.02.01-IP.05-M042/25 Requirements: Research Field Physics Education Level PhD or equivalent Research Field Engineering » Materials engineering Education Level PhD or equivalent Research Field Physics » Computational physics Education Level PhD or equivalent Research Field Engineering » Electrical engineering Education Level PhD or equivalent Skills/Qualifications Scope of work: The Junior Postdoctoral Researcher will conduct theoretical, computational, and experimental research on GaN and related III-nitride semiconductor materials within WP4 (Materials Informatics). The work will focus on understanding their structural, electronic, optical, and thermodynamic properties, crystal defects, doping mechanisms, and growth processes using theoretical approaches, including atomistic simulations and first-principles methods such as density functional theory (DFT). The candidate will contribute to modeling and optimization of ammonothermal GaN crystal growth in collaboration with WP1. Research activities may include numerical simulations of crystal growth mechanisms, thermodynamics, heat and mass transport, fluid dynamics, and growth kinetics. The candidate will also participate in developing a digital twin of the ammonothermal growth process by integrating physics-based models, experimental data, and predictive approaches. Using data science, machine learning (ML), and artificial intelligence (AI) methods, the team will investigate relationships between technological process parameters, material properties, defect formation, and crystal quality to support process optimization and predictive modeling. In the area of epitaxial growth and doping technologies, the candidate will closely collaborate with experimental teams working on MOCVD, HVPE, ion implantation, and ultra-high-pressure annealing (UHPA). A solid understanding of epitaxial processes and defect formation mechanisms will be important for developing reliable simulation strategies and supporting technology optimization. The ability to combine theoretical modeling with hands-on experimental research will be particularly valued. The candidate will collaborate with researchers across WP1–WP3, contribute to interdisciplinary scientific publications, and present research results at international conferences. Specific Requirements Profile of candidates/requirements: PhD degree in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related discipline (obtained not earlier than 3 years before the application deadline, in line with the JPR profile); Documented publication record in peer-reviewed journals (at least 5 publications), appropriate to the candidate's career stage. Strong background in solid-state physics, quantum mechanics, and materials science. Knowledge of materials physics, including crystal structure, electr

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Source: euraxess.ec.europa.eu