Junior Postdoctoral Researcher (JPR) – Quantum Emitters and Rare-Earth Ions in GaN

Description

Offer Description: Position in the project: Junior Postdoctoral Researcher (JPR) – Quantum Emitters and Rare-Earth Ions in GaN Research Field: Experimental Semiconductor Physics / Quantum Optics / Photonics / Materials Science Scientific discipline: Physics / Materials Engineering Job type (employment contract/stipend): Employment contract Working time (full-time / part-time, hours per week): Full-time position (40 hours per week) Number of positions available: 1 Monthly remuneration (total employer’s cost): 15 000 - 20 000 PLN Expected net salary (approximate): 8 800 - 11 600 PLN Position starts on: November/December 2026 Maximum period of contract/stipend agreement: Contract until 31 December 2029 Institution (full official name): Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”, an independent research unit of the Institute of High Pressure Physics, Polish Academy of Sciences Project leader: Prof. dr hab. inż. Michał Boćkowski Project title: Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” Funding programme: Project International Research Agendas (MAB), Grant No. FENG.02.01-IP.05-M042/25 Requirements: Research Field Physics Education Level PhD or equivalent Research Field Engineering » Materials engineering Education Level PhD or equivalent Research Field Engineering » Electrical engineering Education Level PhD or equivalent Skills/Qualifications Scope of work: The Junior Postdoctoral Researcher will investigate optically active point defects and rare-earth ions in GaN as building blocks for solid-state quantum photonic devices. The research will be closely connected to the development of rare-earth-doped and ion-implanted GaN structures within the Center for Nitride Semiconductor Physics and Technology – GaN-Unipress project. Particular emphasis will be placed on the optical characterization of implanted rare-earth ions, including Eu and other technologically relevant dopants, and on understanding the microscopic mechanisms governing the formation, activation, and optical properties of single-photon-emitting centers in GaN. A major objective of the project will be the integration of GaN quantum emitters with tunable open optical microcavities. The candidate will investigate cavity-enhanced spontaneous emission and Purcell enhancement of rare-earth ions and defect-related single-photon emitters, with the longer-term goal of developing efficient GaN-based quantum light sources. The work will include optical spectroscopy and quantum-optical characterization of individual emitters, including low-temperature micro-photoluminescence, time-resolved spectroscopy, photon-correlation measurements, excitation spectroscopy, and optical coherence measurements. Depending on the candidate's background, the project may also involve resonant spectroscopy and cavity-QED experiments. The candidate will work in close collaboration with the GaN growth, ion implantation and ultra-high-pressure annealing teams at the Institute of High Pressure Physics PAS. Experimental optical studies will be carried out primarily in the quantum optics laboratory at the Faculty of Physics, University of Warsaw. The project will address two closely related scientific questions: how implantation and subsequent processing can be used to reproducibly create optically active rare-earth-ion and defect-based quantum emitters in GaN; how their emission properties can be controlled and enhanced through coupling to tunable optical microcavities. The successful candidate will contribute to scientific publications, international conference presentations, and the development of GaN-based quantum photonic devices within the Center for Nitride Semiconductor Physics and Technology – GaN-Unipress project. Specific Requirements Profile of candidates/requirements: PhD degree in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related discipline (obtained not earlier than 3 years before th

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Source

Source: euraxess.ec.europa.eu